The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor. It was jointly developed by Mitsubishi and ABB. Comparison of IGCT and IGBT for the use in the. Modular Multilevel Converter for HVDC applications. Martin Buschendorf, Jens Weber, Steffen Bernet. As power semiconductor devices are the key components of hybrid DC circuit breakers (HCBs), how to select suitable devices is critical for the whole HCB de.
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The main applications are in variable- frequency invertersdrives and traction. A-IGCTs are used where either a reverse conducting diode is applied in parallel for example, in voltage source inverters or where reverse voltage would never occur for example, in switching power supplies or DC traction choppers.
Integrated gate-commutated thyristor – Wikipedia
Views Read Edit View history. The typical application for symmetrical IGCTs is in current source inverters. Multiple IGCTs can be connected in series or in parallel for higher power applications.
An IGCT is a special type of thyristor. The large contact area and short distance reduce both the inductance and resistance of vx connection.
Integrated gate-commutated thyristor Type Passive First production ABB Mitsubishi Pin configuration anodegate and cathode Electronic symbol The integrated gate-commutated thyristor IGCT is a power semiconductor electronic device, used for switching electric current in industrial equipment. Itbt Wikipedia, the free encyclopedia. This results in a complete elimination of minority carrier injection from the lower PN junction and faster turn-off times.
Integrated gate-commutated thyristor
The integrated gate-commutated thyristor IGCT is a power semiconductor electronic device, used for switching electric current in industrial equipment.
Usually, the reverse blocking voltage rating and forward blocking voltage rating are the same.
The wafer device is similar to a gate turn-off thyristor GTO. IGCT are available with or without reverse blocking capability.
Asymmetrical IGCTs can be fabricated with a reverse conducting diode in the same package.
The close integration of the gate unit with the wafer device ensures fast commutation of the conduction current from the cathode to the gate. Reverse blocking capability adds to the forward voltage drop because of the need to have a long, low-doped P1 region. In an IGCT, the gate turn-off current is greater than the anode current. Gate drive electronics are integrated with the thyristor device. The drive circuit PCB is integrated into the package of the device.
GTO vs IGCT vs IGBT | difference between GTO,IGCT,IGBT
The drive circuit surrounds the device and a large circular conductor attaching to the edge of the IGCT is used. It was jointly developed by Mitsubishi and ABB. This page was last edited on 22 Novemberat They typically have a reverse breakdown rating in the tens iyct volts.
The IGCT’s much faster turn-off times compared to the GTO’s allows it to operate at higher frequencies—up to several kHz for very short periods of time.